Gate stack treatment

ABSTRACT

The present disclosure describes a method for forming gate stack layers with a fluorine concentration up to about 35 at. %. The method includes forming dielectric stack, barrier layer and soaking the dielectric stack and/or barrier layer in a fluorine-based gas. The method further includes depositing one or more work function layers on the high-k dielectric layer, and soaking at least one of the one or more work function layers in the fluorine-based gas. The method also includes optional fluorine drive in annealing process, together with sacrificial blocking layer to avoid fluorine out diffusion and loss into atmosphere.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional PatentApplication No. 62/736,766, titled “Gate Dielectric Treatment,” whichwas filed on Sep. 26, 2018 and is incorporated herein by reference inits entirety.

BACKGROUND

The threshold voltage of a transistor (e.g., p-type transistor) can betuned by adjusting the thickness of work function layers within thetransistor's gate structure. However, scaling the transistor gatestructure to manufacture smaller devices introduces challenges inthreshold voltage tuning as adjustments to the work function layerthickness is limited due to a decrease in spacing between transistors.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with common practice in the industry, variousfeatures are not drawn to scale. In fact, the dimensions of the variousfeatures may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of a partially fabricated gate stack,in accordance with some embodiments.

FIG. 2 is a magnified view of work function layers in partiallyfabricated gate stacks of p-type transistors, in accordance with someembodiments.

FIGS. 3A and 3B is a method for the formation of a gate stack thatincludes fluorination operations and optional annealing operations, inaccordance with some embodiments.

FIG. 4 is a cross-sectional view of a partially fabricated gate stack,in accordance with some embodiments.

FIG. 5 is a cross-sectional view of a partially fabricated gate stackduring a fluorination operation, in accordance with some embodiments.

FIG. 6 is a cross-sectional view of a partially fabricated gate stackafter the formation of a sacrificial blocking layer, in accordance withsome embodiments.

FIG. 7 is a secondary ion mass spectrometry (SIMS) plot of two fluorinedistribution profiles in a high-k dielectric layer and interfacialdielectric layer of a partially fabricated gate stack, in accordancewith some embodiments.

FIG. 8 is a cross-sectional view of a partially fabricated gate stackduring a fluorination operation of a barrier layer, in accordance withsome embodiments.

FIG. 9 is a cross-sectional view of a partially fabricated gate stackafter the formation of a sacrificial blocking layer on a barrier layer,in accordance with some embodiments.

FIG. 10 is a secondary ion mass spectrometry (SIMS) plot of two fluorinedistribution profiles in a barrier layer, capping layer, high-kdielectric layer, and interfacial dielectric layer of a partiallyfabricated gate stack, in accordance with some embodiments.

FIG. 11 is a cross-sectional view of a partially fabricated gate stackduring a fluorination operation for on one or more work function layers,in accordance with some embodiments.

FIG. 12 is a secondary ion mass spectrometry (SIMS) plot of two fluorinedistribution profiles in a work function stack of a partially fabricatedgate stack, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides different embodiments, or examples,for implementing different features of the provided subject matter.Specific examples of components and arrangements are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of afirst feature on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed that are between the first and second features,such that the first and second features are not in direct contact.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The term “nominal” as used herein refers to a desired, or target, valueof a characteristic or parameter for a component or a process operation,set during the design phase of a product or a process, together with arange of values above and/or below the desired value. The range ofvalues is typically due to slight variations in manufacturing processesor tolerances.

The term “about” as used herein indicates the value of a given quantitythat can vary based on a particular technology node associated with thesubject semiconductor device. In some embodiments, based on theparticular technology node, the term “about” can indicate a value of agiven quantity that varies within, for example, 5%-30% of the value(e.g., ±5%, ±10%, ±20%, or ±30% of the value).

The term “vertical,” as used herein, means nominally perpendicular tothe surface of a substrate.

The work function layers within the gate structure of a fin-basedtransistor (e.g., a fin field effect transistor or “finFET”) control, inpart, the threshold voltage of the transistor. More particularly, thethreshold voltage value of a finFET depends on the collective thicknessand type of the work function layers. Therefore, by controlling thethickness of the work function layers (or the number of the workfunction layers) in each finFET, it is possible to form finFETs withdifferent threshold voltages on the same substrate. For example, finFETswith low threshold voltage can be used for the “low” or “ultra-low”power applications within the chip, and finFETs with a higher thresholdvoltage can be used for high power applications within the chip.

P-type finFETs and n-type finFETs exhibit a different absolute thresholdvoltage (e.g., the magnitude of the threshold voltage without regard toits sign) because the work function metals used in p-type finFETs andn-type finFETs can be different in terms of thickness, number, and/orcomposition. As a result, in absolute terms, p-type finFETs have ahigher threshold voltage than n-type finFETs. For example, p-typefinFETs require a higher voltage to turn-on (e.g., to allow current toflow between the source and the drain terminals of the transistor). Forthat reason, p-type finFETs can be referred to as “weak” compared ton-type finFETs. One way to reduce (e.g., lower) the threshold voltage ofp-type finFETs is to increase the thickness of their respective workfunction layers. However, the thickness of the work function layers islimited by scaling constraints. For example, as the fin-to-fin pitch andthe gate-to-gate pitch decreases, the available space for the workfunction layers reduces accordingly. Thus, increasing the thickness ofone or more work function layers in p-type finFETs becomes challenging.For example, due to the limited space between the fins, existing orthicker work function layers can exhibit poor gap-fill, which can leadto voids and to an unpredictable threshold voltage variation across thewafer. Therefore, thicker or more work function layers for p-typefinFETs may not be an option for future generation technology nodes.

Embodiments of the present disclosure are directed to a method thatincludes one or more fluorination operations, which can be applied tothe gate stack layers of n-type and p-type finFETs. Each fluorinationoperation can introduce fluorine levels between about 0.01 atomic % andabout 35 atomic %. Additionally, the fluorination operation can beapplied to one or more layers of the gate stack, including, but notlimited to, the gate dielectric, the barrier layer, and/or any of thework function layers of the gate stack. Further, the fluorinationoperation does not involve implants or high energy (e.g., plasma)processing that could damage the gate stack layers. In some embodiments,the fluorination operation includes soaking one or more gate stacklayers to a fluorine-based gas (e.g., nitrogen trifluoride, NF₃; purefluorine gas, F₂; etc.) at temperatures between about 70° C. and about950° C. about 70° C., about 130° C., about 250° C., about 370° C., about550° C., about 650° C., about 700° C., about 900° C.). If thefluorination operation is performed at the gate dielectric level and/orthe barrier layer, an optional annealing operation can be performed tomodulate the fluorine distribution within the gate dielectric and/or thebarrier layer. In such case, a sacrificial blocking layer can be formedon the gate dielectric and/or the barrier layer to prevent out-diffusionof fluorine during the annealing operation. In some embodiments,fluorination of the gate dielectric reduces the trap centers in the gatedielectric by passivating oxygen vacancies and improving the reliabilityof the gate dielectric. In some embodiments, the fluorination of thegate dielectric reduces the density of interface trap (DIT) centers atthe interface between the gate dielectric stack and the substratethrough dangling bond passivation, which in turn improves thereliability of the gate dielectric stack. In some embodiments,fluorination of the barrier layer increases the work function of thebarrier layer, which in turn decreases the threshold voltage of thep-type transistors. Further, barrier layer fluorination can improve thereliability of the gate dielectric stack by partially reducing the trapcenters in the gate dielectric stack through oxygen vacancy passivation.In some embodiments, fluorination of the one or more work functionlayers increases the effective work function of these layers, decreasesthe threshold voltage of p-type transistors, and partially reduces thetrap centers in the gate dielectric stack through oxygen vacancypassivation. Therefore, fluorination of the one or more work functionlayers can also improve the reliability of the gate dielectric stack.

FIG. 1 is a partially fabricated gate stack 100 on a top portion of fins110, which are formed perpendicular to the top surface of a substrate120. Isolation regions 130 electrically isolate fins 110. Further,isolation regions 130 electrically isolate partially fabricated gatestack 100 from substrate 120. By way of example and not limitation,substrate 120 can be a bulk semiconductor wafer (e.g., silicon wafer) ora semiconductor-on-insulator wafer (e.g., silicon-on-insulator, SOI). Insome embodiments, fins 110 can include (i) silicon, (ii) a compoundsemiconductor such as gallium arsenide (GaAs), gallium phosphide (GaP),indium phosphide (InP), indium arsenide (InAs), and/or indium antimonide(InSb), silicon germanium (SiGe), (iii) an alloy semiconductorincluding, gallium arsenide phosphide (GaAsP), aluminum indium arsenide(AlInAs), aluminum gallium arsenide (AlGaAs), gallium indium arsenide(GaInAs), gallium indium phosphide (GaInP), and/or gallium indiumarsenide phosphide (GaInAsP), or (iv) combinations thereof. In someembodiments, isolation regions 130 are shallow trench isolation (STI)structures that include a silicon-based dielectric material such assilicon oxide (SiO₂), silicon nitride (Si₃N₄), silicon oxynitride(SiON), fluorine-doped silicate glass (FSG), a low-k dielectric material(e.g., with a k-value less than about 3.9), and/or other suitabledielectric materials with appropriate gap fill properties.

Partially fabricated gate stack 100 includes several vertically stackedlayers, as shown in FIG. 1. By way of example and not limitation,partially fabricated gate stack 100 can include an interfacialdielectric 100A, a high-k dielectric layer 100B, a capping layer 100C, abarrier layer 100D, a work function stack 100E, and a metal gate layer100F. In some embodiments, interfacial dielectric 100A is a siliconoxide-based dielectric, and high-k dielectric layer 100B is a high-kmaterial with a dielectric constant (k-value) greater than about 3.9(e.g., about 4.0, about 10, about 20, about 30, etc.). By way of exampleand not limitation, interfacial dielectric 100A can include siliconoxide, germanium oxide, and/or silicon oxynitride, and high-k dielectriclayer 100B can include hafnium oxide, lanthanum, oxide, aluminum oxide,yttrium oxide or combinations thereof. In some embodiments, interfacialdielectric 100A and high-k dielectric layer 100B form a gate dielectricstack within partially fabricated gate stack 100. Capping layer 100C isdeposited to absorb oxygen from the gate dielectric stack and to protecthigh-k dielectric layer 100B during the formation of barrier layer 100D,work function stack 100E, and metal gate layer 100F. In someembodiments, capping layer 100C improves the reliability of the gatestack (e.g., interfacial dielectric 100A and high-k dielectric layer100B). By way of example and not limitation, capping layer 100C can be atitanium nitride (TiN) layer or a composite material such as titaniumsilicon nitride (TiSiN). Further, barrier layer 100D can be, forexample, a tantalum nitride (TaN) layer.

In some embodiments, work function stack 100E includes one or moreindividual work function layers not shown in FIG. 1 for simplicity. Thecollective thickness of the work function layers in work function stack100E can set the threshold voltage of the transistor. In someembodiments, each of the work function layers includes titanium nitrideand/or tungsten nitride and can have a thickness that ranges from about8 Å to about 16 Å. Finally, metal gate layer 100F can include atitanium-aluminum alloy or a tantalum-aluminum alloy. In someembodiments, partially fabricated gate stack 100 includes additionallayers that are not shown in FIG. 1 for simplicity. These additionallayers may include, additional barrier layers, metal or metallic filllayers, glue layers, contact layers, etc.

FIG. 2 is a series of magnified views of area 150 of the partiallyfabricated gate stack 100, shown in FIG. 1, for exemplary p-typetransistors 200, 210, and 220. In some embodiments, each of p-typetransistors 200, 210, and 220 has a different threshold voltage valuebased on the number and thickness of work functions layers WF1, WF2,WF3, WF4, and WF5 within work function stack 100E. For example, thegreater the number of work function layers in work function stack 100Eor the thicker the work function stack 100E, the lower the thresholdvoltage value of the resulting transistor. Thus, the threshold voltageof p-type transistor 220 is lower than the threshold voltage of p-typetransistor 210; and the threshold voltage of p-type transistor 210 islower than the threshold voltage of p-type transistor 200. By way ofexample and not limitation, p-type transistor 220 can have a thresholdvoltage suitable for ultra-low power applications in a chip, p-typetransistor 210 can have a threshold voltage suitable for low powerapplications in a chip, p-type transistor 200 can have a thresholdvoltage suitable for standard power applications in a chip. Further,p-type transistors 210 and 220 can be formed alongside p-type transistor220 because p-type transistors 200, 210, and 220 include common workfunction layers (e.g., WF3, WF4, and WF5)—which can be depositedconcurrently for p-type transistors 200, 210, and 220.

In some embodiments, work function layers WF1, WF2, WF3, WF4, and WF5have an equal or different thickness and a similar or differentcomposition (e.g., titanium to nitrogen mole ratio, tungsten to nitrogenmole ratio). Further, more work function layers, or thicker workfunction layers, may not provide additional benefit in terms of loweringthe threshold voltage value of p-type transistor 220. For example, asthe number of work function layers increases, the effect on thethreshold voltage weakens. This is because the added work functionlayers, and/or the formation of thicker work function layers, “pushes”the top work function layers (e.g., WF4 and WF5 layers) further awayfrom the channel, where the influence to the channel is weaker.Therefore, additional work function layers may not necessarily result ina lower threshold voltage value for the p-type transistors. Furthermore,as the fin-to-fin pitch 140 (e.g., shown in FIG. 1) shrinks betweentechnology nodes, the space available for the deposition of partiallyfabricated gate stack 100 reduces proportionally. Therefore, anadditional number of work function layers will occupy a larger portionof the available space between fins 110, which reduces the availablespace for the rest of the layers (e.g., WF4 layer, WF5 layer, 100F layeretc.) in the gate stack.

In some embodiments, fluorinating selective layers of partiallyfabricated gate stack 100 can lower the threshold voltage of p-typetransistors 200, 210, and 220 and improve the transistor's reliability.FIGS. 3A and 3B are a flow chart of an exemplary method 300 thatincludes fluorination operations that further reduce the thresholdvoltage of p-type transistors and improve the reliability of thedielectric stack in both p-type and n-type transistors. Otherfabrication operations may be performed between the various operationsof method 300 and may be omitted merely for clarity. Embodiments of thepresent disclosure are not limited to method 300.

In referring to FIG. 3A, method 300 begins with operation 305 and thedeposition of interfacial dielectric 100A and high-k dielectric layer100B on the exposed portions of fins 110 and the top surface ofisolation regions 130. According to some embodiments, FIG. 4 shows theresulting structure. By way of example and not limitation, interfacialdielectric 100A and high-k dielectric layer 100B can be blanketdeposited in succession using atomic layer deposition (ALD) orplasma-enhance atomic layer deposition (PEALD) methods. In someembodiments, interfacial dielectric 100A and high-k dielectric layer100B together form the gate dielectric stack of partially fabricatedgate stack 100.

In referring to FIGS. 3A and 5, method 300 continues with fluorinationoperation 310, where high-k dielectric layer 100B is exposed to (e.g.,soaked in) a fluorine-based gas 500. By way of example and notlimitation, fluorine-based gas 500 is a fluorine source (e.g., afluorine precursor) such as pure fluorine gas (F₂), nitrogen trifluoride(NF₃), fluoroform (CHF₃), tetrafluoromethane (CF₄), sulfur hexafluoride(SF₆), hexafluoroethane (C₂F₆), or combinations thereof. Theabove-mentioned list of fluorine-based gases is not exhaustive andadditional fluorine-based gases may be used. In some embodiments,fluorine-based gas 500 thermally decomposes on the surface of high-kdielectric layer 100B or in the ambient above the surface of high-kdielectric layer 100B. According to some embodiments, the surface ofhigh-k dielectric layer 100B, the surface of barrier layer 100D, thesurfaces of work function layers WF1/WF2/WF3/WF4/WF5 of work functionstack 100E can act as catalyst for the thermal decomposition offluorine-based gas 500. To thermally decompose fluorine-based gas 500,substrate 120 is heated to a temperature between about 70° C. and about950° C. (e.g., at about 70° C., at about 100° C., at about 200° C., atabout 300° C., at about 325° C., at about 650° C., at about 800° C., atabout 900° C., etc.). For processing temperatures below about 70° C.,fluorine-based gas 500 may not actively decompose on the surface ofhigh-k dielectric layer 100B or in the ambient above high-k dielectriclayer 100B. Therefore, processing temperatures below 70° C. may limitthe amount of fluorine that will be incorporated into high-k dielectriclayer 100B. On the other hand, at processing temperatures above about950° C., high-k dielectric layer 100B can become polycrystalline andform grain boundaries. The grain boundaries in high-k dielectric layer100B can become a potential path for electrical charge between the gatestack and the fin and are therefore undesirable. Further, at highprocessing temperatures (e.g., above 950° C.) interfacial dielectric100A can grow thicker, which can reduce the combined dielectric constant(k-value) of interfacial dielectric 100A and high-k dielectric layer100B, and negatively impact the electrical behavior of the transistor.According to some embodiments, exposing high-k dielectric layer 100B tofluorine-based gas 500 is a “thermal treatment” that does not physicallydamage the exposed high-k dielectric layer 100B or interfacialdielectric 100A.

According to some embodiments, the soaking time for fluorinationoperation 310 ranges from about 1 s to about 30 min (e.g., from about 1s to about 20 s, from about 15 s to about 1 min, from about 50 s toabout 5 min, from about 1 min to about 10 min, from about 5 min to about20 min, from about 10 min to about 30 min). Further the ambient pressureduring the soaking process can range from about 0.5 Torr to about 150Torr (e.g., from about 0.5 Torr to about 10 Torr, from about 5 Torr toabout 50 Torr, from about 30 Torr to about 75 Torr, from about 60 Torrto about 100 Torr, from about 90 Torr to about 150 Torr). The abovementioned process parameters (e.g., soaking time and ambient pressure)are exemplary and not limiting. The soaking time and ambient pressurecan be further tuned depending on the desired amount of fluorine to beincorporated in high-k dielectric layer 100B. For example, thecombination of a long soaking time (e.g., 10 min) and a high ambientpressure (e.g., 70 Torr) can favor the incorporation of higher amountsof fluorine in high-k dielectric layer 100B. However, long soaking times(e.g., longer than about 30 min) can decrease throughput and increasefluorine-based gas consumption, thus the manufacturing cost.Furthermore, the soaking time and the ambient pressure may be furtheradjusted depending on the type of fluorine-based gas 500, the type ofhigh-k dielectric layer 100B, and other factors (e.g., the geometry ofthe reactor where the fluorination operation takes place).

In some embodiments, during operation 310, some fluorine diffusesthrough high-k dielectric layer 100B towards the interface withinterfacial dielectric 100A. Fluorine diffusion, through high-kdielectric layer 100B, is a desirable effect that has the followingbenefits: (i) purifies high-k dielectric layer 100B by removing carbonand/or chlorine byproducts contamination originating from the depositionprocess of high-k dielectric layer 100B, and (ii) reduces trap centersin high-k dielectric layer 100B (e.g., at the interface between high-kdielectric layer 100B and interfacial dielectric 100A) and at theinterface between interfacial dielectric 100A and the channel in fin110. In some embodiments, trap centers are reduced via oxygen vacancypassivation in high-k dielectric 100B and via dangling bond passivationat the interface between interfacial dielectric 100A and the channel infin 110. Consequently, fluorine diffusion through high-k dielectriclayer 100B can improve the transistor's reliability—e.g., reduces thenegative bias temperature instability (nBTI), leakage current (Igi), andtime dependent dielectric breakdown (TDDB). Therefore, operation 310 canbe beneficial for both n-type and p-type transistors.

In some embodiments, the fluorine concentration that can be incorporatedin high-k dielectric layer 100B can range from about 0.01 atom % (“at.%”) to about 35 at. % (e.g., from about 0.01 at. % to about 1 at. %,from about 0.5 at. % to about 5 at. %, from about 3 at. % to about 10at. %, from 8 at. % to about 25 at. %, from about 20 at. % to about 35at. %, etc.) depending on process parameters such as the type offluorine-based gas 500, the process temperature, the ambient pressure,and the soaking time. For example, for a given soaking time (e.g., about1 min), the combination of higher process temperature (e.g., about 300°C.) and ambient pressure (e.g., about 50 Torr) can result in a higherfluorine concentration. Conversely, and for the same soaking time (e.g.,about 1 min), the combination of lower process temperature (e.g., about200° C.) and ambient pressure (e.g., about 1 Torr) can result a lowerfluorine concentration.

By way of example and not limitation, operation 310 can be performedin-situ or ex-situ. For example, operation 310 can be performed withouta vacuum break after the deposition of high-k dielectric layer 100B orwith a vacuum break in a standalone reactor. If operation 310 isperformed in-situ, then the deposition reactor of high-k dielectriclayer 100B can be fitted with gas delivery lines for the delivery offluorine-based gas 500.

According to some embodiments, the peak of the fluorine concentrationafter operation 310 is closer to the surface of high-k dielectric layer100B and progressively tapers off towards the interface between high-kdielectric layer 100B and interfacial dielectric 100A. In someembodiments, the fluorine peak concentration is located between about 1Å and about 12 Å from the treated surface of high-k dielectric layer100B. In some embodiments, the fluorine peak concentration extendsbetween about 5% to about 75% of the total thickness of high-kdielectric layer 100B.

In some embodiments, the fluorine distribution within high-k dielectriclayer 100B and interfacial dielectric 100A can be modified with anoptional annealing operation applicable to both n-type and p-typetransistors. By way of example and not limitation, if an optionalannealing operation is performed, a sacrificial blocking layer isdeposited on high-k dielectric layer 100B to prevent fluorineout-diffusion during the annealing. The sacrificial blocking layer canbe subsequently removed after the annealing.

In some embodiments, the deposition of the sacrificial blocking layer,the annealing operation, and the removal of the sacrificial blockinglayer are all optional operations that can be performed to furthermodulate the fluorine distribution within high-k dielectric layer 100Band interfacial dielectric 100A (e.g., to drive the fluorine atomsdeeper into the gate dielectric stack). These optional operationscorrespond to optional operations 315-325 of method 300 shown in FIG.3A.

In operation 315 a sacrificial blocking layer 600 can be deposited onhigh-k dielectric layer 100B as shown in FIG. 6. By way of example andnot limitation, sacrificial blocking layer 600 can be a silicon layer ora titanium nitride layer that can be later removed with a wet etchingchemistry. As discussed above, the purpose of sacrificial blocking layer600 is to block or suppress the out-diffusion of fluorine from high-kdielectric layer 100B back to the ambient above high-k dielectric layer100B. For example, fluorine out-diffusion can occur during thesubsequent annealing operation. According to some embodiments,sacrificial blocking layer 600 can be deposition by ALD or PEALD with athickness that ranges from about 5 Å to about 100 Å (e.g., from about 5Å to about 10 Å, from about 5 Å to about 20 Å, from about 15 Å to about30 Å). A sacrificial blocking layer below 5 Å may be unable to preventfluorine out-diffusion. And even though a sacrificial blocking layerthicker than about 100 Å can prevent out-diffusion of fluorine, it willrequire a longer deposition time and removal process.

In referring to FIG. 3A, method 300 may continue with optional annealingoperation 320. In some embodiments, the optional annealing operation 320is performed at a temperature range between about 70° C. and about 550°C. (e.g., about 70° C., about 100° C., about 200° C., about 250° C.,about 325° C., etc.) for about 2 s to about 300 s to “drive-in” thefluorine atoms towards interfacial dielectric 100A. In some embodiments,optional annealing operation 320 is performed in nitrogen ambient, informing gas ambient (e.g., nitrogen/hydrogen gas mixture), in ammoniaambient, or in diluted oxygen ambient (e.g., oxygen/nitrogen gasmixture). According to some embodiments, after the annealing operation320, the distribution of the fluorine concentration can shift deeperinto high-k dielectric layer 100B (e.g., towards the interface withinterfacial dielectric 100A). By way of example, FIG. 7 shows twofluorine distribution profiles obtained by secondary ion massspectrometry (SIMS) for a high-k dielectric layer 100B/interfacialdielectric 100A stack, according to some embodiments. The y-axis in FIG.7 represents the fluorine atomic concentration, and the x-axisrepresents the depth in the high-k dielectric layer 100B/interfacialdielectric 100A stack—with high-k dielectric layer 100B being the toplayer and interfacial dielectric 100A being the bottom layer of thestack. The fluorine distribution plot in FIG. 7 shows two differentfluorine distributions within high-k dielectric layer 100B andinterfacial dielectric 100A that have been obtained with and without theoptional annealing operation 320. For example, in FIG. 7, afterfluorination operation 310, the fluorine distribution within high-kdielectric layer 100B and interfacial dielectric 100A (the relativethickness and location of which are represented by the vertical dottedlines) is represented by curve 700. On the other hand, after theoptional annealing operation 320, the fluorine distribution withinhigh-k dielectric layer 100B and interfacial dielectric 100A isrepresented by curve 710. According to some embodiments, fluorinedistribution 710 (e.g., after the optional annealing operation 320)develops a larger full width at half maximum (FWHM) compared to the“original” fluorine distribution 700 obtained during fluorinationoperation 310. In other words, the fluorine distribution 710 is “wider”and more evenly distributed within high-k dielectric layer 100B (e.g.,compared to fluorine distribution 700) and extends deeper into high-kdielectric layer 100B and interfacial dielectric 100A.

In some embodiments, the optional annealing operation 320 does notexceed temperatures of about 550° C. to avoid damaging high-k dielectriclayer 100B, interfacial dielectric 100A, and substrate 120 fromconsecutive high temperature processing. For example, lower annealingtemperatures (e.g., below about 550° C.) keep the overall thermal budgetof the optional annealing operation 320 at low levels. According to someembodiments, the lower annealing temperatures may require longerannealing times to achieve the fluorine distribution 710 of FIG. 7.Conversely, higher annealing temperature may require shorter annealingtimes to achieve the fluorine distribution 710 of FIG. 7. In someembodiments, different combinations of annealing temperatures andannealing times can result in similar or different fluorine distributionfrom fluorine distribution 710 shown in FIG. 7. For example, acombination of annealing time and temperature can provide a fluorinedistribution between fluorine distributions 700 and 710.

According to some embodiments, if a fluorine drive-in process isrequired and optional annealing operation 320 is performed, the processtemperature of operation 310 can be low (e.g., close to about 70° C.) sothat the collective thermal budget of both operations is kept at lowlevels. For example, with optional annealing operation 320, thetemperature of operation 310 can be set at about 70° C., while theoptional annealing operation 320 can be performed at about 250° C. Onthe other hand, without the optional annealing operation 320, thetemperature of operation 310 can be set higher at about 300° C.).

After optional annealing operation 320, sacrificial blocking layer 600is removed according to operation 325 of method 300 shown in FIG. 3A. Byway of example and not limitation, sacrificial blocking layer 600 can beremoved with a wet etching chemistry, such as a solution that includeshydrochloric acid, hydrogen peroxide, and water (HPM); ammoniumhydroxide; phosphoric acid; and/or hydrofluoric acid. According to someembodiments, the formation of partially fabricated gate stack 100 mayresume after the removal of sacrificial blocking layer 600.

As discussed above, operations 315, 320, and 325 are optional and arealso configured to enhance reduction of trap centers at the interfacebetween high-k dielectric layer 100B and interfacial dielectric 100A byoxygen vacancy and dangling bond passivation in interfacial dielectric100A—thereby improving the reliability of both n-type and p-typetransistors. In some embodiments, method 300 can perform operation 310and then proceed to operation 330.

Method 300 continues with operation 330, in which capping layer 100C andbarrier layer 100D are deposited on high-k dielectric layer 100B asshown in FIG. 1. In some embodiments, capping layer 100C and barrierlayer 100D are blanket deposited with a conformal deposition method,such as for example ALD, PEALD, chemical vapor deposition (CVD), plasmaenhanced CVD (PECVD), etc.

Method 300 continues with fluorination operation 335, where the barrierlayer 100D is exposed (or soaked) to a fluorine-based gas 800 as shownin FIG. 8. In some embodiments, fluorination operation 335 is similar tofluorination operation 310. For example, fluorine-based gas 800 influorination operation 335 can be F₂, NF₃, CHF₃, CF₄, SF₆, C₂F₆, orcombinations thereof. Further, the processing temperature forfluorination operation 335 can be between about 70° C. and about 950°C., and the soaking time can range from about 1 s to about 30 min.Further the ambient pressure during the soaking process can range fromabout 0.5 Torr to about 150 Torr.

In some embodiments, and depending on the processing conditions (e.g.,the type of fluorine-based gas, the soaking time, the process pressureand temperature), the total fluorine concentration that can beincorporated in barrier layer 100D can range from about 0.01 at. % toabout 35 at. %. In some embodiments, fluorination of barrier layer 100Dincreases its work function and subsequently lowers the thresholdvoltage of the p-type transistor. By way of example and not limitation,the higher the fluorine concentration, the lower the resulting thresholdvoltage value for the p-type transistor. In some embodiments, fluorineincorporation above about 35 at. % does not provide substantialthreshold voltage benefits for p-type transistors for example, it doesnot further lower the threshold voltage value of the p-type transistors.

In some embodiments, to “drive-in” the fluorine atoms through cappinglayer 100C towards high-k dielectric layer 100B and interfacialdielectric 100A, method 300 includes optional operations 340-350 shownin FIG. 3B. For example, and in referring to FIG. 3B, method 300 maycontinue with optional operation 340 and the deposition of a sacrificialblocking layer 900 on barrier layer 100D, as shown in FIG. 9. In someembodiments, blocking sacrificial layer 900 of operation 340 is similarto sacrificial blocking layer 600 of operation 315 shown in FIG. 6. Forexample, sacrificial layer 900 of operation 340 can include a siliconlayer or a titanium nitride layer that can be later removed with a wetetching chemistry. Accordingly, sacrificial layer 900 of operation 340can be deposited by ALD or PEALD with a thickness that ranges from about5 Å to about 100 Å (e.g., from about 5 Å to about 10 Å, from about 5 Åto about 20 Å, from about 15 Å to about 30 Å). In some embodiments, asacrificial blocking layer below 5 Å may be unable to prevent fluorineout-diffusion, and a sacrificial blocking layer that is thicker thanabout 100 Å requires a longer deposition time and removal process—whichcan increase the process time and the IC fabrication cost.

In some embodiments, annealing operation 345 shown in FIG. 3B is similarto operation 320. For example, in some embodiments, the optionalannealing operation 345 is performed in nitrogen ambient, in forming gasambient (e.g., nitrogen/hydrogen gas mixture), in ammonia ambient, or indiluted oxygen ambient (e.g., oxygen/nitrogen gas mixture) at atemperature range between about 70° C. and about 550° C. (e.g., about70° C., about 100° C., about 200° C., about 250° C., about 325° C.,etc.) for about 2 s to about 300 s to “drive-in” the fluorine atomstowards capping layer 100C, high-k dielectric layer 100B, andinterfacial dielectric 100A. According to some embodiments, afterannealing operation 345, the distribution of the fluorine concentrationshifts deeper into barrier layer 100D, capping layer 100C, and high-kdielectric layer 100B.

In referring to FIG. 3B, method 300 continues with operation 350, wheresacrificial layer 900 deposited in operation 340 is removed with a wetetching chemistry. In some embodiments, the sacrificial blocking layerremoval operation 350 is similar to operation 325. By way of example andnot limitation, HPM (e.g., a solution that includes hydrochloric acid,hydrogen peroxide, and water), ammonium hydroxide, phosphoric acid,and/or hydrofluoric acid can be used to remove the sacrificial blockinglayer in operation 350.

FIG. 10 is a SIMS profile of two fluorine distributions within barrierlayer 100D, capping layer 100C, high-k dielectric layer 100B, andinterfacial dielectric 100A. The y-axis in FIG. 10 represents thefluorine atomic concentration and the x-axis represents the depth in thestack—with work function stack 100E being the top layer and interfacialdielectric 100A being the bottom layer of the stack. The fluorinedistribution plot in FIG. 10 shows two different fluorine(concentration) distributions that have been obtained with and withoutthe optional annealing operation 345. For example, in FIG. 10, afterfluorination operation 335, the fluorine distribution within barrierlayer 100D (the relative thickness and location of which is representedby the vertical dotted lines) is represented by curve 1000. On the otherhand, after the optional annealing operation 345, the fluorinedistribution within barrier layer 100D is represented by curve 1010.According to some embodiments, fluorine distribution 1010 (e.g., afterthe optional annealing operation 345) develops a larger FWHM compared tothe “original” fluorine distribution 1000 that is obtained duringfluorination operation 310. As a result, fluorine distribution 1010extends into capping layer 100C, high-k dielectric layer 100B, andinterfacial dielectric 100A. The resulting “wider” fluorine distribution1010 is attributed to the diffusion of fluorine atoms during theoptional annealing operation 345. In some embodiments, the tail offluorine distribution 1010 can reach interfacial dielectric 100A. Thedepth at which the fluorine atoms diffuse into the aforementioned stackdepends on the process conditions of the optional annealing operation345. For example, longer annealing times (e.g., towards about 300 s) andhigher annealing temperatures (e.g., towards about 550° C.) tend toproduce a wider fluorine concentration distribution (e.g., like fluorinedistribution 1010), while shorter annealing times (e.g., towards about 2s) and lower annealing temperatures (e.g., towards about 70° C.) tend toproduce a narrow fluorine concentration distribution (e.g., narrowerthan fluorine distribution 1010 and wider than fluorine distribution1000).

As discussed above, operations 340, 345, and 350 are optional and areconfigured to drive in fluorine incorporated in barrier layer 100D insome embodiments, method 300 can perform operation 335 and then proceeddirectly to operation 355.

Method 300 continues with operation 355, where an n^(th) work functionlayer is deposited on barrier layer 100D as shown in FIGS. 1 and 2. Thenumber “n” of work function layers deposited can range from 1 to 15,depending upon the number of different threshold voltage transistorsrequired. For example, when “n” is 5, a total of 5 different workfunction layers (e.g., WF1, WF2, WF3, WF4, WF5 layers) can be depositedto fabricate a total of 6 (n+1) different threshold voltage devices, asubset of which is shown in FIG. 2. In some embodiments, work functionlayers are blanket deposited with a conformal deposition method, such asfor example ALD, PEALD, CVD, PECVD, etc.

In some embodiments, photolithography processes can be used to achieve adifferent number of work function layers in p-type transistors toproduce devices with different nominal threshold voltages. For example,n-type or p-type transistors with fewer number of work function layersmay be masked by photoresist, while other p-type transistors receiveadditional work function layers. Alternatively, n-type or p-typetransistors with a fewer number of work function layers may be maskedprior to the work function layer deposition process and un-maskedtowards the end of the work function layer deposition process.

In some embodiments, an optional fluorination operation can be appliedto the work function layers of partially fabricated gate stack 100 tointroduce additional amounts of fluorine that can further lower thethreshold voltage of the p-type transistor. For example, in optionalfluorination operation 360 of method 300, the work function layer WFn(e.g. WF1, and/or WF2, and/or WF3, and/or WF4, and/or WF5), which wasdeposited in previous operation 355, is exposed (or soaked) to afluorine-based gas. In some embodiments, fluorination operation 360 issimilar to fluorination operations 310 and 335. For example, thefluorine-based gas in fluorination operation 360 can be F₂, NF₃, CHF₃,CF₄, SF₆, C₂F₆, or combinations thereof. Further, the processingtemperature of fluorination operation 360 can include temperaturesbetween about 70° C. and about 950° C., while the soaking time can rangefrom about 1 s to about 30 min. Further the ambient pressure during thesoaking process can range from about 0.5 Torr to about 150 Torr. FIG. 11shows the fluorination operation 360 in which the n^(th) work functionlayer (e.g. WF1 and/or WF2 and/or WF3 and/or WF4 and/or WF5) and/or workfunction stack 100E is exposed to (e.g., soaked in) a fluorine-based gas1100.

In some embodiments, an annealing operation, such as annealingoperations 320 and 345, can also be performed after fluorinationoperation 360.

In some embodiments, fluorination operation 360 can be selectivelyperformed on only one of the work function layers to selectivelydecrease the threshold voltage of a subset of the formed p-typetransistors. For example, operation 360 can be performed on workfunction layer WF1 to selectively decrease the threshold voltage ofp-type transistor 220 shown in FIG. 2. In another example, operation 360can be performed on work function layer WF2 to selectively decrease thethreshold voltage of p-type transistors 210 and 220 shown in FIG. 2. Ifwork function layer WF2 undergoes fluorination operation 360, p-typetransistor 210 will obtain a lower threshold voltage than p-typetransistor 220 since work function layer WF2 in p-type transistor 210 iscloser to the channel region of fin 110 when compared to work functionlayer WF2 in p-type transistor 220.

According to some embodiments, FIG. 12 is a SIMS profile that shows thefluorine concentration within work function stack 100E for two exemplaryfluorine distributions 1200 and 1210. Fluorine distribution 1200 can beobtained if fluorination operation 360 of method 300 is performedselectively on work function layer WF1. Accordingly, fluorinedistribution 1210 can be obtained if fluorination operation 360 ofmethod 300 is performed after the deposition of each work function layer(e.g., after the deposition of WF1, after the deposition of WF2, afterthe deposition of WF3, after the deposition of WF4, and after thedeposition of WF5). As such, in fluorine distribution 1210, each workfunction layer (Wn) has its own fluorine peak, which corresponds to eachfluorination operation 360. Fluorine distribution 1210 increases theeffective work function of all the work function layers (e.g., WF1, WF2,WF3, WF4 and WF5), according to some embodiments.

In some embodiments, and after operation 355 or optional fluorinationoperation 360, metal gate layer 100F can be deposited, according tooperation 370. In some embodiments, metal gate layer 100F is blanketdeposited on barrier layer 100D or on work function stack 100E. Asdiscussed above, metal gate layer 100F can include a titanium-aluminumalloy or a tantalum-aluminum alloy. In some embodiments, partiallyfabricated gate stack 100 includes additional layers such as metal ormetallic fill layers, glue layers, contact layers etc. In someembodiments, a metal fill is deposited on gate layer 100F to fill thearea between adjacent fins 110.

In some embodiments, fluorination operations 310 and 335 can beperformed in both p-type and n-type transistors so that both types oftransistors can benefit from the elevated levels of fluorine in theirgate stacks. For example, elevated fluorine concentration in n-typetransistors can improve the quality of high-k dielectric layer 100B andinterfacial dielectric 100A by removing carbon, chlorine, or otherbyproducts originating from the deposition process of high-k dielectriclayer 100B and by reducing trap centers at the interface between high-kdielectric layer 100B and interfacial dielectric 100A as discussedabove. One the other hand, fluorination operation 360 can be reservedfor p-type transistors—however, this is not limiting and n-typetransistors may be subjected to fluorination operation 360 with minimalimpact on their threshold voltage.

In some embodiments, and referring to FIGS. 2, 3A and 3B, fluorinationoperations 310 and 335 and 360 of method 300 can be performed after thedeposition of interfacial dielectric 100A, after the nitridation ofinterfacial dielectric 100A, after the deposition of high-k dielectriclayer 100B, before, after the deposition of barrier layer 100D, afterthe deposition of work function layer WF1, after the deposition of workfunction layer WF2, after the deposition of work function layer WF3,after the deposition of work function layer WF4, after the deposition ofwork function layer WF5, or combinations thereof.

In some embodiments, the process parameters governing fluorinationoperations 310, 335 and 360 can be adjusted based on the desired amountof fluorine incorporation required in the gate stack, the desiredprofile of fluorine required in the gate stack, thermal budgetconsiderations, the fabrication stage of the partially fabrication gatestack 100, and the total number of fluorination operations completedduring the formation of partially fabricated gate stack 100.

In some embodiments, the effectiveness of the fluorination process inlowering the threshold voltage value of p-type transistors is strongerwhen performed closer to the vicinity of barrier layer 100D, andprogressively weakens when it is performed further away from barrierlayer 100D (e.g., at work function layer WF5).

In some embodiments, method 300 is not limited to finFETs and can beapplied to other types of p-type transistors, such gate all around (GAA)transistors including (e.g., lateral gate all around (LGAA) transistors,vertical gate all around (VGAA) transistors, etc.), or to any transistorthat can benefit from an increase in the fluorine concentration of itsgate stack.

In some embodiments, work function layers 100E can be directly depositedon gate dielectric layer 100B, e.g., without a capping layer and/orbarrier layer therebetween. This can be achieved by skipping thedepositions of capping layer 100C and/or barrier layer 100D (e.g., byskipping operation 330 in method 300). Alternatively this can also beachieved with additional processing, such as removing capping layer 100Cand barrier layer 100D prior to the deposition of work function stack100E with a wet etching process and/or a dry etching process. Forexample, referring to 300, a wet or a dry etching process can removecapping layer 100C and/or barrier layers 100D prior to the work functionlayer deposition in operation 355. In some embodiments, the wet etchingchemistry can include HPM, ammonium hydroxide, phosphoric acid, and/orhydrofluoric acid. The dry etching process can include chloride orfluoride based gases, such as tungsten hexafluoride (WF₆), tungstenpenta-chloride (WCl₅), tungsten hexa-chloride (WCl₆), tantalum chloride,or titanium chloride (TiCl₄).

Embodiments of the present disclosure are directed to a fluorinationmethod for gate stack layers of transistors that achieves incorporationof fluorine concentration between about 0.01 at. % to about 35 at. %.Additionally, the fluorination method described herein can be applied toone or more layers of the gate stack, including the interfacialdielectric, the high-k dielectric, the barrier layer, and any of thework function layers of the gate stack. Further, the fluorineincorporation in the gate stack layers, as described herein, does notinvolve implants or high energy (e.g., plasma) processing that coulddamage the gate stack layers. In some embodiments, the fluorinationmethod includes soaking the one or more gate stack layers to afluorine-based gas (e.g., fluorine gas, nitrogen trifluoride,fluoroform, tetrafluoromethane, sulfur hexafluoride, hexafluoroethane,or combinations thereof) at temperatures between about 70° C. and about950° C. If the fluorination method is performed on the gate dielectric,an optional annealing operation can be performed to modulate thefluorine distribution within the gate dielectric layer's, barrier layer,work function layer/s. A sacrificial blocking layer can be used toprevent out diffusion of fluorine during the annealing operation. Insome embodiments, fluorine incorporation in the gate dielectric improvesthe quality and reliability of high-k dielectric and the interfacialdielectric for both n-type and p-type transistors. In some embodiments,fluorine incorporation in the barrier layer and/or work function layersimproves the effective work function of barrier and/or work functionlayer thereby decreasing threshold voltage of p-type transistors andalso partially improves the quality and reliability of gate dielectriclayers for both n-type and p-type transistors.

In some embodiments, a method includes forming a fin on a substrate anda gate dielectric stack on the fin, where the gate dielectric stackcomprises a high-k dielectric layer disposed on an interfacialdielectric layer. The method further includes soaking the high-kdielectric layer in a fluorine-based gas and depositing a capping layeron the high-k dielectric layer.

In some embodiments, a transistor structure includes a substrate with afin thereon. The transistor structure further includes a gate dielectricstack on the fin, where the gate dielectric stack includes aninterfacial dielectric layer and a high-k dielectric layer on theinterfacial dielectric layer with a fluorine concentration between about0.01 atomic % and about 35 atomic %. The transistor also includes one ormore work function layers on the gate dielectric stack.

In some embodiments, a method includes forming an interfacial dielectricon fins disposed on a substrate, depositing a high-k dielectric layer onthe interfacial dielectric, depositing one or more work function layerson the high-k dielectric layer, heating the substrate to a temperaturebetween about 70° C. and about 950° C., and soaking at least one of theone or more work function layers in the fluorine-based gas.

It is to be appreciated that the Detailed Description section, and notthe Abstract of the Disclosure section, is intended to be used tointerpret the claims. The Abstract of the Disclosure section may setforth one or more but not all possible embodiments of the presentdisclosure as contemplated by the inventors), and thus, are not intendedto limit the subjoined claims in any way.

The foregoing disclosure outlines features of several embodiments sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art will appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art will also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A method comprising: forming an interfacialdielectric on fins disposed on a substrate; depositing a high-kdielectric layer on the interfacial dielectric; depositing one or morework function layers on the high-k dielectric layer; heating thesubstrate to a temperature between about 70° C. and about 950° C.; andsoaking at least one of the one or more work function layers in afluorine-based gas to dope the at least one of the one or more workfunction layers while heating the substrate.
 2. The method of claim 1,wherein soaking the at least one of the one or more work function layersin the fluorine-based gas comprises soaking the at least one of the oneor more work function layers in fluorine gas (F₂), nitrogen trifluoride(NF₃), fluoroform (CHF₃), tetrafluoromethane (CF₄), sulfur hexafluoride(SF₆), hexafluoroethane (C₂F₆), or combinations thereof to incorporatefluorine in the at least one of the one or more work function layers. 3.The method of claim 1, further comprising, prior to depositing thehigh-k dielectric layer, soaking the interfacial dielectric in thefluorine-based gas to dope the interfacial dielectric with fluorinewhile heating the substrate.
 4. The method of claim 1, wherein soakingthe at least one of the one or more work function layers in thefluorine-based gas comprises soaking the at least one of the one or morework function layers at an ambient pressure between about 0.5 Torr andabout 150 Torr.
 5. The method of claim 1, further comprising, prior todepositing the one or more work function layers: depositing a barrierlayer on the high-k dielectric layer; soaking the barrier layer in thefluorine-based gas at a temperature between about 70° C. and about 950°C.; depositing a sacrificial blocking layer on the barrier layer;annealing the substrate at a temperature between about 70° C. and about550° C.; and removing the sacrificial blocking layer.
 6. The method ofclaim 1, wherein soaking the at least one or more work function layerscomprises performing an implantation-free soaking process on the atleast one or more work function layers.
 7. The method of claim 1,wherein soaking the at least one or more work function layers comprisesperforming a plasma-free soaking process on the at least one or morework function layers.
 8. The method of claim 1, further comprising:depositing a sacrificial blocking layer over and in contact with thehigh-k dielectric layer; annealing the substrate with the high-kdielectric layer being capped with the sacrificial blocking layer;removing the sacrificial blocking layer; depositing a capping layer overand in contact with the annealed high-k dielectric layer; and depositinga barrier layer over the capping layer and under the one or more workfunction layers.
 9. A method, comprising: forming an interfacialdielectric over a fin structure of a substrate; depositing a high-kdielectric layer over the interfacial dielectric; depositing a firstwork function layer over the high-k dielectric layer; doping the firstwork function layer with fluorine by soaking the first work functionlayer in a fluorine-based gas; depositing a second work function layerover the soaked first work function layer; and doping the second workfunction layer with fluorine by soaking the second work function layerin the fluorine-based gas.
 10. The method of claim 9, wherein doping thefirst work function layer comprises soaking the first work functionlayer with one of fluorine gas (F₂), nitrogen trifluoride (NF₃),fluoroform (CHF₃), tetrafluoromethane (CF₄), sulfur hexafluoride (SF₆),and hexafluoroethane (C₂F₆) at a temperature between about 70° C. andabout 950° C.
 11. The method of claim 9, wherein doping the first workfunction layer comprises exposing a surface of the first work functionlayer to the fluorine-based gas, and wherein depositing the second workfunction layer comprises depositing the second work function layer overand in contact with the surface of the first work function layer. 12.The method of claim 9, further comprising: depositing a capping layerover the high-k dielectric layer; and depositing a barrier layer overthe capping layer and under the first work function layer.
 13. Themethod of claim 12, further comprising: doping the barrier layer withfluorine by soaking the barrier layer in the fluorine-based gas whileheating the substrate; depositing a sacrificial blocking layer over thebarrier layer; annealing the substrate at a temperature between about70° C. and about 550° C. with the sacrificial layer being over thebarrier layer; and removing the sacrificial blocking layer.
 14. Themethod of claim 9, further comprising depositing an aluminum-containedgate metal layer over the second work function layer.
 15. A method,comprising: forming an interfacial dielectric over a substrate;depositing a high-k dielectric layer over the interfacial dielectric;depositing a first work function layer over the high-k dielectric layer;soaking the first work function layer in a fluorine-based gas to dopethe first work function layer with fluorine while heating the substrate;depositing a second work function layer over the soaked first workfunction layer; and depositing a gate metal layer over the second workfunction layer with the second work function layer being free fromfluorine.
 16. The method of claim 15, wherein soaking the first workfunction layer comprises exposing the first work function layer to oneof fluorine gas (F₂), nitrogen trifluoride (NF₃), fluoroform (CHF₃),tetrafluoromethane (CF₄), sulfur hexafluoride (SF₆), andhexafluoroethane (C₂F₆).
 17. The method of claim 15, further comprisingdepositing a barrier layer over the high-k dielectric layer, and whereindepositing the first work function layer comprises depositing the firstwork function layer over a first portion of the barrier layer with asecond portion of the barrier layer being exposed.
 18. The method ofclaim 17, wherein depositing the second work function layer comprisesdepositing the second work function layer over and in contact with thesecond portion of the barrier layer.
 19. The method of claim 17, furthercomprising depositing a capping layer over the high-k dielectric layerand under the barrier layer.
 20. The method of claim 19, furthercomprising: depositing a sacrificial blocking layer over the barrierlayer; annealing the substrate at a temperature between about 70° C. andabout 550° C.; and removing the sacrificial blocking layer.